1 aos semiconductor product reliability report AON1610 , rev a plastic encapsulated device alpha & omega semiconductor, inc www.aosmd.com
2 this aos product reliability report summarizes the qualification result for AON1610 . accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. review of final electrical test result confirms that AON1610 passes aos quality and reliability requirements. the released product will be categorized by the process family and be routine monitored for continuously improving the product quality. table of contents: i. product description ii. package and die information iii. reliability stress test summary and result s iv. reliability evaluation i. product description: the AON1610 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. details refer to the datasheet. ii. die / package information: AON1610 process standard sub - micron 2 0 v n - channel mos fet package type dfn1.6 x1.6a lead frame bare cu die attach ag epoxy bond ing cu wire mold material epoxy resin with silica filler moisture level up to level 1
3 iii. reliability stress test summary and result s * note : the reliability data presents total of available generic data up to the published date. iv. reliability evaluation fit rate (per billion): 3.61 mttf = 31615 years the presentation of fit rate for the individual product reliability is restricted by the actual burn - in sample size. failure rate determination is based on jedec standard jesd 85. fit means one failure per billion hours. failure rate = chi 2 x 10 9 / [ 2 (n) (h) (af) ] = 3. 61 mt t f = 10 9 / fit = 31615 years chi2 = chi squared distribution, determined by the number of failures and confidence interval n = total number of units from burn - in tests h = duration of burn - in testing af = acceleration factor from test to use conditions (ea = 0.7ev and tuse = 55 c ) acceleration factor [ af ] = exp [ea / k (1/tj u C 1/tj s )] acceleration factor ratio list: 55 deg c 70 deg c 85 deg c 100 deg c 115 deg c 130 deg c 150 deg c af 25 9 87 32 13 5.64 2.59 1 tj s = stressed junction temperature in degree (kelvin), k = c+273.16 tj u =the use junction temperature in degree (kelvin), k = c+273.16 k = boltz m anns constant, 8.6 17164 x 10 - 5 e v / k test item test condition time point total sample size * number of failures reference standard msl precondition 168hr 85 c /85%rh + 3 cycle reflow@260 c (msl 1) - 2079 pcs 0 jesd22 - a113 htgb temp = 150 c , vgs=100% of vgsmax 168 / 500 / 1000 hour s 924 pcs 0 jesd22 - a108 htrb temp = 150 c , vds=80% of vdsmax 168 / 500 / 1000 h ou rs 924 pcs 0 jesd22 - a108 hast 130 c , 85% rh , 33.3 psi, v d s = 8 0% of v d s max up to 42v 96 h ou rs 693 pcs 0 jesd22 - a110 pressure pot 121 c , 29.7psi , rh=100% 96 h ou rs 693 pcs 0 jesd22 - a102 temperature cycle - 65 c to 150 c , air to air, 250 / 500 cycles 693 pcs 0 jesd22 - a104
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